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SPC6601_14 Datasheet, PDF (1/11 Pages) SYNC POWER Crop. – N & P Pair Enhancement Mode MOSFET | |||
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SPC6601
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC6601 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
ï¬ Power Management in Note book
ï¬ Portable Equipment
ï¬ Battery Powered System
ï¬ DC/DC Converter
ï¬ Load Switch
ï¬ DSC
ï¬ LCD Display inverter
FEATURES
ïµ N-Channel
30V/2.8A,RDS(ON)= 68mâ¦@VGS=10V
30V/2.3A,RDS(ON)= 78mâ¦@VGS=4.5V
30V/1.5A,RDS(ON)= 108mâ¦@VGS=2.5V
ïµ P-Channel
-30V/-2.8A,RDS(ON)=105mâ¦@VGS=- 10V
-30V/-2.5A,RDS(ON)=120mâ¦@VGS=-4.5V
-30V/-1.5A,RDS(ON)=150mâ¦@VGS=-2.5V
ïµ Super high density cell design for extremely low
RDS (ON)
ïµ Exceptional on-resistance and maximum DC
current capability
ïµ TSOTâ 23-6P package design
PIN CONFIGURATION( TSOTâ 23-6P )
PART MARKING
2013/12/25 Ver.1
Page 1
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