SPC6332_11 Datasheet, PDF (1/11 Pages) SYNC POWER Crop. – N & P Pair Enhancement Mode MOSFET

SPC6332
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC6332 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹ N-Channel
20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V
‹ P-Channel
-20V/1.0A,RDS(ON)= 520mΩ@VGS=-4.5V
-20V/0.8A,RDS(ON)= 700mΩ@VGS=-2.5V
-20V/0.7A,RDS(ON)= 950mΩ@VGS=-1.8V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-363 (SC-70-6L) package design
PIN CONFIGURATION( SOT-363 / SC-70-6L)
PART MARKING
2011/04/07 Ver.2
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