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SPC6332 Datasheet, PDF (1/11 Pages) SYNC POWER Crop. – N & P Pair Enhancement Mode MOSFET | |||
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SPC6332
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC6332 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
 N-Channel
20V/0.95A,RDS(ON)=380mâ¦@VGS=4.5V
20V/0.75A,RDS(ON)=450mâ¦@VGS=2.5V
20V/0.65A,RDS(ON)=800mâ¦@VGS=1.8V
 P-Channel
-20V/1.0A,RDS(ON)= 520mâ¦@VGS=-4.5V
-20V/0.8A,RDS(ON)= 700mâ¦@VGS=-2.5V
-20V/0.7A,RDS(ON)= 950mâ¦@VGS=-1.8V
 Super high density cell design for extremely low
RDS (ON)
 Exceptional on-resistance and maximum DC
current capability
 SOT-363 (SC-70-6L) package design
PIN CONFIGURATION( SOT-363 / SC-70-6L)
PART MARKING
2007/04/25 Ver.1
Page 1
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