SPC5604 Datasheet, PDF (1/14 Pages) SYNC POWER Crop. – N & P Pair Enhancement Mode MOSFET

SPC5604
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC5604 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching, low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
Power Management in Note book
Battery Powered System
DC/DC Converter
LCD Display inverter
FEATURES
N-Channel
40V/10A,RDS(ON)= 24mΩ@VGS= 10V
40V/ 8A,RDS(ON)= 28mΩ@VGS= 4.5V
40V/ 6A,RDS(ON)= 32mΩ@VGS= 2.5V
P-Channel
-40V/-10A,RDS(ON)= 32mΩ@VGS=- 10V
-40V/- 8A,RDS(ON)= 42mΩ@VGS=- 4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252-5L package design
PIN CONFIGURATION
( TO-252-5L )
( TO-252-4L )
PART MARKING
2012/10/22 Ver.2
Page 1