SPC1810 Datasheet, PDF (1/12 Pages) SYNC POWER Crop. – N & P Pair Enhancement Mode MOSFET

SPC1810
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC1810 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
FEATURES
‹ N-Channel
100V/5A,RDS(ON)= 160mΩ@VGS= 10V
‹ P-Channel
-100V/-8A,RDS(ON)= 160mΩ@VGS=- 10V
-100V/-4A,RDS(ON)= 200mΩ@VGS=- 4.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOP – 8P package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2009/12/05 Ver.1
Page 1