SPC1018 Datasheet, PDF (1/11 Pages) SYNC POWER Crop. – Power Management in Note book

SPC1018
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC1018 is the N- and P-Dual Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter
FEATURES
 N-Channel
20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
 P-Channel
-20V/0.45A,RDS(ON)=520mΩ@VGS=-4.5V
-20V/0.35A,RDS(ON)=700mΩ@VGS=-2.5V
-20V/0.25A,RDS(ON)=950mΩ@VGS=-1.8V
 Super high density cell design for extremely low
RDS(ON)
 Exceptional on-resistance and maximum DC
current capability
 SOT-563 (SC-89-6L) package design
PIN CONFIGURATION( SOT-563 / SC-89-6L)
PART MARKING
2013/10/03 Ver.1
Page 1