SPC1016_09 Datasheet, PDF (1/11 Pages) SYNC POWER Crop. – N & P Pair Enhancement Mode MOSFET

SPC1016
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC1016 is the Dual P-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹ N-Channel
20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
‹ P-Channel
-20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V
-20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V
-20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-563 (SC-89-6L) package design
PIN CONFIGURATION( SOT-563 / SC-89-6L)
PART MARKING
2009/06/20 Ver.2
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