B5817WS_1 Datasheet, PDF (1/4 Pages) Changzhou Shunye Electronics Co.,Ltd. – Schottky Barrier Diode

Schottky Barrier Diode
B5817WS-B5819WS
FEATURES
z Extremely low V_F.
z Low stored change,majority carrier
conduction.
z Low power loss/high efficient
Pb
Lead-free
APPLICATIONS
z For Use In Low Voltage, High Frequency Inverters.
z Free Wheeling, And Polarity Protection Applications.
ORDERING INFORMATION
Type No.
Marking
B5817WS
SJ
B5818WS
SK
B5819WS
SL
SOD-323
Package Code
SOD-323
SOD-323
SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
symbol B5817WS B5818WS B5819WS Unit
Non-Repetitive Peak reverse voltage
V_RM
20
30
40
V
Peak repetitive Peak reverse voltage
V_RRM
Working Peak Reverse voltage
V_RWM
20
30
40
V
DC Reverse Voltage
V_R
RMS Reverse Voltage
V_R(RMS)
14
21
28
V
Average Rectified output Current
I_o
1
A
Peak forward surge current@=8.3ms
I_FSM
25
A
Repetitive Peak Forward Current
I_FRM
625
mA
Power Dissipation
P_d
250
mW
Thermal Resistance Junction to Ambient R_θJA
500
℃/W
Storage temperature
T_STG
-65~+150
℃
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