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VN3515 Datasheet, PDF (2/2 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FETs
Thermal Characteristics
Package
ID (continuous)* ID (pulsed)
VN3515L (TO-92)
150mA
VN4012L (TO-92)
160mA
* ID (continuous) is limited by max rated Tj.
600mA
650mA
Power Dissipation
@ TC = 25°C
1W
1W
θjc
°C/W
125
125
θja
°C/W
170
170
VN3515L/VN4012L
IDR*
150mA
160mA
IDRM
600mA
650mA
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
VGS(th)
IGSS
IDSS
Parameter
Drain-to-Source
Breakdown Voltage
VN3515
VN4012
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Min Typ Max
350
400
0.6
1.8
10
1
100
ID(ON)
RDS(ON)
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
0.15
0.3
VN3515
9.5
15
17
35
VN4012
9.5
12
17
30
GFS
Forward Transconductance
125 350
CISS
Input Capacitance
110
COSS
Common Source Output Capacitance
30
CRSS
Reverse Transfer Capacitance
10
td(ON)
Turn-ON Delay Time
20
tr
Rise Time
20
td(OFF)
Turn-OFF Delay Time
65
tf
Fall Time
65
VSD
Diode Forward Voltage Drop
1.2
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
3. See TN2540 data sheet for characteristic curves.
Unit
V
V
nA
µA
A
Ω
m
pF
ns
V
Conditions
VGS = 0V, ID = 100µA
VGS = VDS, ID = 1mA
VGS = ± 20V, VDS = 0V
VGS = 0V, VDS = 0.8 Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
VDS = 10V, VGS = 4.5V
VGS = 4.5V, ID = 100mA
VGS = 4.5V, ID = 100mA, TA = 125°C
VGS = 4.5V, ID = 100mA
VGS = 4.5V, ID = 100mA, TA = 125°C
VDS =15V, ID = 100mA
VDS = 25V, VGS = 0V
f = 1MHz
VDD = 25V
ID = 100mA
RGEN = 25Ω
VGS = 0V, ISD = 160mA
Switching Waveforms and Test Circuit
VDD
10V
INPUT
0V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
2
PULSE
GENERATOR
Rgen
INPUT
RL
OUTPUT
D.U.T.
11/12/01
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com