VN0808 Datasheet, PDF (2/2 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FETs

Thermal Characteristics
Package
I_D (continuous)*
I_D (pulsed)
TO-92
0.3A
* _{ID (continuous) is limited by max rated Tj.}
1.9A
Power Dissipation
@ T_C = 25°C
1W
θ_jc
°C/W
125
θ_ja
°C/W
170
VN0808
I_DR*
0.3A
I_DRM
1.9A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min Typ Max Unit
Conditions
BV_DSS
Drain-to-Source Breakdown Voltage
80
V_GS(th)
Gate Threshold Voltage
0.8
I_GSS
Gate Body Leakage
I_DSS
Zero Gate Voltage Drain Current
V
2.0
V
100
nA
10
µA
500
I_D(ON)
ON-State Drain Current
1.5
A
R_DS(ON)
Static Drain-to-Source ON-State Resistance
4.0
Ω
G_FS
Forward Transconductance
170
m
C_ISS
Input Capacitance
50
C_OSS
Common Source Output Capacitance
40
pF
C_RSS
Reverse Transfer Capacitance
10
t_(ON)
t_(OFF)
Turn-ON Time
Turn-OFF Time
10
ns
10
V_SD
Diode Forward Voltage Drop
0.85
V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
I_D = 10µA, V_GS = 0V
V_GS = V_DS, I_D = 1mA
V_GS = ±15V, V_DS = 0V
V_GS = 0V, V_DS = 80V
V_GS = 0V, V_DS = 0.8 x Max Rating
T_A = 125°C
V_GS = 10V, V_DS = 10V
V_GS = 10V, I_D = 1A
V_DS = 10V, I_D = 0.5A
V_GS = 0V, V_DS = 25V
f = 1 MHz
V_DD = 25V, I_D = 1A
R_GEN = 25Ω
I_SD = 0.35A, V_GS = 0V
Switching Waveforms and Test Circuit
10V
INPUT
0V
10%
V_DD
OUTPUT
0V
t_(ON)
t_d(ON)
t_r
10%
90%
90%
t_(OFF)
t_d(OFF)
t_F
10%
90%
PULSE
GENERATOR
R_gen
INPUT
V_DD
R_L
OUTPUT
D.U.T.
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
2
11/12/01
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: [phone] • FAX: [phone]
www.supertex.com