VN0606L-G Datasheet, PDF (2/3 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FET

VN0606
Thermal Characteristics
Package
I_D
(continuous)^†
(mA)
I_D
(pulsed)
(A)
Power Dissipation
@T_C = 25^OC
(W)
θ_jc
(^OC/W)
θ_ja
(^OC/W)
I_DR^†
(mA)
I_DRM
(A)
TO-92
330
1.6
1.0
125
170
330
1.6
Notes:
† I_D (continuous) is limited by max rated T_j .
Electrical Characteristics (T_A = 25^OC unless otherwise specified)
Sym Parameter
Min Typ Max Units Conditions
BV_DSS
V_GS(th)
I_GSS
Drain-to-source breakdown voltage
Gate threshold voltage
Gate body leakage
I_DSS Zero gate voltage drain current
I_D(ON)
R_DS(ON)
G_FS
C_ISS
C_OSS
C_RSS
On-state drain current
Static drain-to-source on-state resistance
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
60 -
-
V V_GS = 0V, I_D = 10µA
0.8 -
2.0
V V_GS = V_DS, I_D = 1.0mA
-
-
100
nA V_GS = ±30V, V_DS = 0V
-
-
10
V_GS = 0V, V_DS = 50V
-
-
500
µA _{VGS = 0V, VDS = 50V,}
T_A = 125°C
1.5 -
-
A V_GS = 10V, V_DS = 10V
-
-
3.0
Ω V_GS = 10V, I_D = 1.0A
170 -
- mmho V_DS = 10V, I_D = 500mA
-
-
50
V_GS = 0V,
-
-
25
pF V_DS = 25V,
-
-
5.0
f = 1.0MHz
t_(ON)
t_(OFF)
Turn-on delay time
Turn-off delay time
-
-
10
V_DD = 25V,
ns I_D = 600mA,
-
-
10
R_GEN = 25Ω
V_SD Diode forward voltage drop
- 0.85 -
V V_GS = 0V, I_SD = 470mA
Notes:
1. All D.C. parameters 100% tested at 25^OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
INPUT
10%
0V
V_DD
OUTPUT
0V
t_(ON)
t_d(ON)
t_r
10%
90%
90%
t_(OFF)
t_d(OFF)
t_f
10%
90%
PULSE
GENERATOR
R_GEN
INPUT
V_DD
R_L
OUTPUT
D.U.T.
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: [phone] ● www.supertex.com
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