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TP2535 Datasheet, PDF (2/4 Pages) Supertex, Inc – P-Channel Enhancement-Mode Vertical DMOS FETs
Thermal Characteristics
Package
TO-92
ID (continuous)*
-86mA
ID (pulsed)
-0.6A
Power Dissipation
@ TA = 25°C
0.74W
TO-243AA
-125mA
-1.2A
1.6W†
*
†
ID (continuous) is limited by max
Mounted on FR5 Board, 25mm x
rated Tj.
25mm x
1.57mm.
Signficant
PD
increase
possible
on
ceramic
substrate.
θjc
°C/W
125
15
TP2535/TP2540
θja
°C/W
170
78†
IDR*
-86mA
-125mA
IDRM
-0.6A
-1.2A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
VGS(th)
∆VGS(th)
IGSS
IDSS
Parameter
Min Typ Max Unit
Drain-to-Source
TP2540 -400
Breakdown Voltage
TP2535 -350
V
Gate Threshold Voltage
-1.0
-2.4
V
Change in VGS(th) with Temperature
Gate Body Leakage
4.8
-100
mV/°C
nA
Zero Gate Voltage Drain Current
-10
µA
-1.0
mA
ID(ON)
ON-State Drain Current
-0.2 -0.3
-0.4 -1.1
RDS(ON)
Static Drain-to-Source
ON-State Resistance
20
30
19
25
∆RDS(ON) Change in RDS(ON) with Temperature
0.75
GFS
Forward Transconductance
100 175
CISS
Input Capacitance
60 125
COSS
Common Source Output Capacitance
20
70
CRSS
Reverse Transfer Capacitance
10
25
td(ON)
Turn-ON Delay Time
10
tr
Rise Time
10
td(OFF)
Turn-OFF Delay Time
20
tf
Fall Time
13
VSD
Diode Forward Voltage Drop
-1.8
trr
Reverse Recovery Time
300
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
Ω
%/°C
m
pF
ns
V
ns
Conditions
VGS = 0V, ID = -2mA
VGS = VDS, ID = -1mA
VGS = VDS, ID = -1mA
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
VGS = -4.5V, VDS = -25V
VGS = -10V, VDS = -25V
VGS = -4.5V, ID = -100mA
VGS = -10V, ID = -100mA
VGS = -10V, ID = -100mA
VDS = -25V, ID = -100mA
VGS = 0V, VDS = -25V
f = 1 MHz
VDD = -25V
ID = -0.4A
RGEN = 25Ω
VGS = 0V, ISD = -100mA
VGS = 0V, ISD = -100mA
Switching Waveforms and Test Circuit
0V
INPUT
-10V
0V
OUTPUT
VDD
10%
t(ON)
td(ON)
tr
90%
t(OFF)
td(OFF)
tF
90%
90%
10%
10%
2
PULSE
GENERATOR
Rgen
INPUT
D.U.T.
OUTPUT
RL
VDD