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TN2435 Datasheet, PDF (2/4 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FETs
Thermal Characteristics
Package
TO-243AA
ID (continuous)*
365mA
ID (pulsed)
1.8A
Power Dissipation
@ TA = 25°C
1.6W†
θjc
°C/W
15
* ID (continuous) is limited by max rated Tj.
† Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
θja
°C/W
78†
IDR*
365mA
TN2435
IDRM
1.8A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
VGS(th)
∆VGS(th)
IGSS
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in VGS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min Typ Max Unit
350
V
0.8
V
-5.5 mV/°C
100
nA
10
µA
1.0
mA
ID(ON)
RDS(ON)
ON-State Drain Current
Static Drain-to Source ON-State
Resistance
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
td(OFF)
tf
VSD
trr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
0.5
1.0
A
15.0
10.0
Ω
6.0
1.7 %/°C
125
m
125 200
25
70
pF
8
25
5
20
10
20
ns
28
40
10
30
1.5
V
300
ns
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Conditions
VGS = 0V, ID = 250µA
VGS = VDS, ID= 1.0mA
VGS = VDS, ID= 1.0mA
VGS = ± 20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
VGS = 4.5V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 3.0V, ID = 150mA
VGS = 4.5V, ID = 250mA
VGS = 10V, ID = 750mA
VGS = 10V, ID = 750mA
VDS = 25V, ID = 350mA
VGS = 0V, VDS = 25V
f = 1.0MHz
VDD = 25V,
ID = 750mA
RGEN = 25Ω
VGS = 0V, ISD = 750mA
VGS = 0V, ISD = 750mA
Switching Waveforms and Test Circuit
10V
INPUT
0V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
Rgen
INPUT
VDD
RL
OUTPUT
D.U.T.
2