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| TC2320_07 Datasheet, PDF (2/4 Pages) Supertex, Inc – N- and P-Channel Enhancement-Mode Dual MOSFET | |||
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TC2320
N-Channel Electrical Characteristics (@ 25°C unless otherwise speciï¬ed)
Symbol Parameter
Min
Typ
Max
Units Conditions
BVDSS Drain-to-source breakdown voltage
200
-
-
V
VGS = 0V, ID = 100µA
VGS(th) Gate threshold voltage
0.6
-
2.0
V
VGS = VDS, ID = 1.0mA
ÎVGS(th) Change in VGS(th) with temperature
-
-
-4.5 mV/OC VGS = VDS, ID = 1.0mA
IGSS Gate body leakage
-
-
100
nA VGS = ±20V, VDS = 0V
-
-
1.0
µA VGS = 0V, VDS = 100V
IDSS Zero gate voltage drain current
-
-
10.0
µA
VGS = 0V,
VDS = Max rating
-
-
1.0
mA
VGS = 0V, TA = 125OC
VDS = 0.8 Max Rating
I
ON-state drain current
D(ON)
0.6
-
-
1.2
-
-
A
VGS = 4.5V, VDS = 25V
VGS = 10V, VDS = 25V
RDS(ON)
Static drain-to-source
ON-state resistance
-
-
8.0
Ω
VGS = 4.5V, ID = 150mA
-
-
7.0
VGS = 10V, ID = 1.0A
ÎRDS(ON) Change in RDS(ON) with temperature
150
-
1.0
%/OC VGS = 4.5V, ID =150mA
GFS Forward transconductance
-
-
-
mmho VDS = 25V, ID = 200mA
CISS Input capacitance
-
-
110
VGS = 0V,
COSS Common source output capacitance
-
-
60
pF VDS = 25V,
CRSS Reverse transfer capacitance
-
-
23
f = 1.0MHz
td(ON)
tr
td(OFF)
tf
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
-
-
20
-
-
15
VDD =25V,
-
-
25
ns ID = 150mA,
RGEN = 25â¦
-
-
25
VSD Diode forward voltage drop
-
-
1.8
V
VGS = 0V, ISD = 200mA
trr
Reverse recovery time
-
300
-
ns VGS = 0V, ISD = 200mA
Notes:
1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
N- Channel Switching Waveforms and Test Circuit
10V
INPUT
0V 10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
2
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