 English |
|
|
|
|
|
|
|
| TC2320 Datasheet, PDF (2/3 Pages) Supertex, Inc – N- and P- Channel Enhancement-Mode Dual MOSFET | |||
| |||
| ◁ |
TC2320
N-Channel Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
VGS(th)
âVGS(th)
IGSS
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in VGS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min Typ Max Unit
200
V
0.6
2.0
V
-4.5 mV/°C
100
nA
1.0
µA
10.0
µA
1.0
mA
ID(ON)
ON-State Drain Current
0.6
1.2
A
RDS(ON)
Static Drain-to-Source
ON-State Resistance
8.0
â¦
7.0
â¦
âRDS(ON) Change in RDS(ON) with Temperature
1.0
GFS
Forward Transconductance
150
CISS
Input Capacitance
110
COSS
Common Source Output Capacitance
60
CRSS
Reverse Transfer Capacitance
23
td(ON)
Turn-ON Delay Time
20
tr
Rise Time
15
td(OFF)
Turn-OFF Delay Time
25
tf
Fall Time
25
VSD
Diode Forward Voltage Drop
1.8
trr
Reverse Recovery Time
300
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
%/°C
m
pF
ns
V
ns
Conditions
ID = 100µA, VGS = 0V
VGS = VDS, ID = 1mA
ID = 1mA, VGS = VDS
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = 100V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
VGS = 4.5V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 4.5V, ID = 150mA
VGS = 10V, ID = 1.0A
VGS = 4.5V, ID = 150mA
VDS = 25V, ID = 200mA
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 25V
ID = 150mA
RGEN = 25â¦
ISD = 200mA, VGS = 0V
ISD = 200mA, VGS = 0V
Switching Waveforms and Test Circuit
10V
INPUT
0V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
Rgen
INPUT
VDD
RL
OUTPUT
D.U.T.
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese