VP3203N3-G Datasheet, PDF (1/6 Pages) Supertex, Inc – P-Channel Enhancement-Mode Vertical DMOS FET

VP3203
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
► Free from secondary breakdown
► Low power drive requirement
► Ease of paralleling
► Low C_ISS and fast switching speeds
► High input impedance and high gain
► Excellent thermal stability
► Integral source-to-drain diode
Applications
General Description
The Supertex VP3203 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
► Motor controls
► Converters
► Amplifiers
► Switches
► Power supply circuits
► Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device
TO-92
Package Options
TO-243AA (SOT-89)
VP3203
VP3203N3-G
VP3203N8-G
-G indicates package is RoHS compliant (‘Green’)
* Mil visual screening available.
Die*
VP3203ND
BV_DSS/BV_DGS
(V)
-30
R_DS(ON)
(max)
(Ω)
0.6
Pin Configurations
I_D(ON)
(min)
(A)
14.0
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BV_DSS
BV_DGS
±20V
Operating and storage temperature -55^OC to +150^OC
Soldering temperature*
300^OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
DRAIN
SOURCE
GATE
TO-92 (N3)
DRAIN
SOURCE
DRAIN
GATE
TO-243AA (SOT-89) (N8)
Product Marking
SiVP _{YY = Year Sealed}
3 2 0 3 _{WW = Week Sealed}
YYWW
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92 (N3)
VP2LW ^{W = Code for week sealed}
= “Green” Packaging
Packages may or may not include the following marks: Si or
TO-243AA (SOT-89) (N8)
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: [phone] ● www.supertex.com