VP2206N3-G Datasheet, PDF (1/6 Pages) Supertex, Inc – P-Channel Enhancement-Mode Vertical DMOS FET

Supertex inc.
VP2206
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
►► Free from secondary breakdown
►► Low power drive requirement
►► Ease of paralleling
►► Low C_ISS and fast switching speeds
►► High input impedance and high gain
►► Excellent thermal stability
►► Integral source-to-drain diode
Applications
►► Motor controls
►► Converters
►► Amplifiers
►► Switches
►► Power supply circuits
►► Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
The Supertex VP2206 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from
thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low
input capacitance, and fast switching speeds are desired.
Ordering Information
Device
Package Options
TO-39
TO-92
NW
(Die in wafer form)
Wafer / Die Options
NJ
(Die on adhesive tape)
VP2206
VP2206N2
VP2206N3-G
VP5206NW
VP5206NJ
For packaged products, -G indicates package is RoHS compliant (‘Green’). TO-39 package is RoHS compliant (‘Green’).
Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF52 for layout and dimensions.
ND
(Die in waffle pack)
VP5206ND
Product Summary
Pin Configurations
Device
VP2206N2
VP2206N3-G
BV_DSS/BV_DGS
(V)
-60
R_DS(ON)
(max)
(Ω)
0.9
Absolute Maximum Ratings
Parameter
I_D(ON)
(min)
(A)
-4.0
Value
GATE
SOURCE
DRAIN
TO-39 (N2)
Product Marking
SOURCE
DRAIN
GATE
TO-92 (N3)
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BV_DSS
BV_DGS
±20V
Operating and storage temperature -55^OC to +150^OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
VP
2206N2
YYWW
YY = Year Sealed
WW = Week Sealed
Package may or may not include the following marks: Si or
TO-39 (N2)
SiVP _{YY = Year Sealed}
2 2 0 6 _{WW = Week Sealed}
YYWW
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92 (N3)
Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: [phone] ● www.supertex.com