VP1504 Datasheet, PDF (1/2 Pages) Supertex, Inc – P-Channel Enhancement-Mode Vertical DMOS FETs

VP1504/VP1506/VP1509
P-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV_DSS /
BV_DGS
-40V
R_DS(ON)
(max)
8.0Ω
I_D(ON)
(min)
-0.5A
-60V
8.0Ω
-0.5A
-90V
8.0Ω
-0.5A
† MIL visual screening available.
Order Number / Package
Die^†
VP1504NW
VP1506NW
VP1509NW
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C_ISS and fast switching speeds
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Advanced DMOS Technology
This enhancement-mode (normally-off) transistor utilizes a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
BV_DSS
BV_DGS
±20V
-55^OC to +150^OC
300^OC
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