VP0104_07 Datasheet, PDF (1/4 Pages) Supertex, Inc – P-Channel Enhancement-Mode Vertical DMOS FETs

Supertex inc.
VP0104/VP0106/VP0109
P-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV_DSS /
BV_DGS
-40V
-60V
-90V
R_DS(ON)
(max)
8.0Ω
8.0Ω
8.0Ω
I_D(ON)
(min)
-0.5A
-0.5A
-0.5A
Order Number / Package
TO-92
VP0104N3
VP0106N3
VP0109N3
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏
Low C and fast switching speeds
ISS
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
BV_DSS
BV_DGS
± 20V
-55^oC to +150^oC
300^oC
SGD
TO-92
Note: See Package Outline section for dimensions.
· · · · ^{Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: [phone] FAX: [phone] www.supertex.com}
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