VN3205_07 Datasheet, PDF(1/8 Page) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FETs

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VN3205_07 Datasheet, PDF (1/8 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FETs

VN3205

N-Channel Enhancement-Mode

Vertical DMOS FETs

Features

âº Free from secondary breakdown

âº Low power drive requirement

âº Ease of paralleling

âº Low CISS and fast switching speeds

âº Excellent thermal stability

âº Integral SOURCE-DRAIN diode

âº High input impedance and high gain

âº Complementary N- and P-Channel devices

Applications

âº Motor controls

âº Converters

âº Ampliï¬ers

âº Switches

âº Power supply circuits

âº Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

General Description

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertexâs well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with

the high input impedance and positive temperature coefï¬cient

inherent in MOS devices. Characteristic of all MOS structures,

these devices are free from thermal runaway and thermally

induced secondary breakdown.

Supertexâs vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Ordering Information

Device

TO-92

14-Lead

PDIP

TO-243AA

(SOT-89)

Die(1)

BVDSS/BVDGS

(V)

VN3205 VN3205N3-G VN3205P-G

-G indicates package is RoHS compliant (âGreenâ)

Note:

(1) MIL visual screening available.

VN3205N8-G VN3205ND

Pin Conï¬gurations

RDS(ON)

max

(Î©)

0.3

VGS(th)

max

(V)

2.4

Absolute Maximum Ratings

Parameter

Value

Drain to source voltage

Drain to gate voltage

Gate to source voltage

BVDSS

BVDGS

Â±20V

Operating and storage temperature -55Â°C to +150Â°C

Soldering temperature*

+300Â°C

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

* Distance of 1.6mm from case for 10 seconds.

DRAIN

SOURCE

DRAIN

SOURCE

GATE DRAIN

GATE

TO-92 (N3)

TO-243AA (SOT-89) (N8)

N/C

14-Lead PDIP (P)

▷