VN1306 Datasheet, PDF (1/4 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FETs

VN1304
VN1306
VN1310
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV_DSS /
R_DS(ON)
I_D(ON)
Order Number / Package
BV_DGS
(max)
(min)
TO-39
TO-92
40V
8.0Ω
0.5A
—
—
60V
8.0Ω
0.5A
VN1306N2
—
7
100V
8.0Ω
0.5A
—
VN1310N3
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C_ISS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
BV_DSS
BV_DGS
± 20V
-55°C to +150°C
300°C
7-191
DGS
TO-39
Case: DRAIN
SGD
TO-92
Note: See Package Outline section for dimensions.