VN0550_07 Datasheet, PDF (1/5 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FETs

VN0550
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
General Description
► Free from secondary breakdown
► Low power drive requirement
► Ease of paralleling
► Low C_ISS and fast switching speeds
► Excellent thermal stability
► Integral SOURCE-DRAIN diode
► High input impedance and high gain
► Complementary N- and P-Channel devices
Applications
► Motor controls
► Converters
► Amplifiers
► Switches
► Power supply circuits
► Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
The Supertex VN0550 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device
Package
VN0550N3
VN0550N3-G
TO-92
-G indicates package is RoHS compliant (‘Green’)
BV_DSS/BV_DGS
(V)
500
R_DS(ON)
(max)
(Ω)
60
I_D(ON)
(min)
(mA)
150
Absolute Maximum Ratings
Parameter
Value
Drain to source voltage
Drain to gate voltage
Gate to source voltage
BV_DSS
BV_DGS
±20V
Operating and storage temperature -55°C to +150°C
Soldering temperature¹
+300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Notes:
1. Distance of 1.6mm from case for 10 seconds.
Pin Configuration
S GD
TO-92
(front view)