VN0120 Datasheet, PDF (1/4 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FETs

–
OBSOLETE
–
VP0120
P-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV_DSS /
BV_DGS
R_DS(ON)
(max)
I_D(ON)
(min)
Order Number / Package
TO-92
Die^†
-200V
25Ω
-100mA
VP0120N3
VP0120ND
†_{MIL visual screening available}
7
Features
■ Free from secondary breakdown
■ Low power drive requirement
■ Ease of paralleling
■ Low C_ISS and fast switching speeds
■ Excellent thermal stability
■ Integral Source-Drain diode
■ High input impedance and high gain
■ Complementary N- and P-channel devices
Applications
■ Motor controls
■ Converters
■ Amplifiers
■ Switches
■ Power supply circuits
■ Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
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ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
BV_DSS
BV_DGS
± 20V
-55°C to +150°C
300°C
7-223
SGD
TO-92
Note: See Package Outline section for dimensions.