VN0106N3-G Datasheet, PDF (1/5 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FET

Supertex inc.
VN0106
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►► Free from secondary breakdown
►► Low power drive requirement
►► Ease of paralleling
►► Low C_ISS and fast switching speeds
►► Excellent thermal stability
►► Integral source-drain diode
►► High input impedance and high gain
General Description
This enhancement-mode (normally-off) transistor utilizes a
vertical DMOS structure and Supertex’s well-proven, silicon-
gate manufacturing process. This combination produces a
device with the power handling capabilities of bipolar transistors
and the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Applications
►► Motor controls
►► Converters
►► Amplifiers
►► Switches
►► Power supply circuits
►► Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Ordering Information
Device
Package
TO-92
NW
(Die in wafer form)
Wafer / Die Options
NJ
(Die on adhesive tape)
VN0106
VN0106N3-G
VN1506NW
VN1506NJ
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF15 for layout and dimensions.
ND
(Die in waffle pack)
VN1506ND
Product Summary
Pin Configuration
BV_DSS/BV_DGS
(V)
60
R_DS(ON)
(max)
(Ω)
3.0
I_D(ON)
(min)
(A)
2.0
SOURCE
DRAIN
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BV_DSS
BV_DGS
±20V
Operating and storage temperature -55^OC to +150^OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
GATE
TO-92 (N3)
Product Marking
SiVN _{YY = Year Sealed}
0 1 0 6 _{WW = Week Sealed}
YYWW
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92 (N3)
Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: [phone] ● www.supertex.com