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| TP5322_07 Datasheet, PDF (1/4 Pages) Supertex, Inc – P-Channel Enhancement-Mode Vertical DMOS FETs | |||
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TP5322
P-Channel Enhancement-Mode
Vertical DMOS FETs
Features
⺠High input impedance
⺠Low threshold
⺠Low input capacitance
⺠Fast switching speeds
⺠Low on resistance
⺠Low input and output leakage
⺠Free from secondary breakdown
⺠Complementary N- and P-channel devices
Applications
⺠Logic level interfaces - ideal for TTL and CMOS
⺠Battery operated systems
⺠Photo voltaic devices
⺠Analog switches
⺠General purpose line drivers
⺠Telecom switches
General Description
The Supertex TP5322 is a low threshold enhancement-
mode (normally-off) transistor utilizing an advanced vertical
DMOS structure and Supertexâs well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefï¬cient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertexâs vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Ordering Information
Package Options
TO-236AB1
TO-243AA2
TP5322K1
TP5322N8
TP5322K1-G
TP5322N8-G
-G indicates package is RoHS compliant (âGreenâ)
Notes: 1Same as SOT-23, 2Same as SOT-89.
BVDSS /BVDGS
-220V
RDS(ON)
(max)
12Ω
VGS(TH)
(max)
-2.4V
ID(ON)
(min)
-0.7A
Product marking for TO-236AB:
P3C
where = 2-week alpha date code
Product marking for TO-243AA:
TP3C
where = 2-week alpha date code
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature
-55OC to +150OC
Soldering temperature3
300OC
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
3Distance of 1.6mm from case for 10 seconds.
Pin Conï¬gurations
Drain
Gate
Source
TO-236AB
(Top View)
D
G
D
S
TO-243AA
(top view)
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