TP2522_07 Datasheet, PDF (1/5 Pages) Supertex, Inc – P-Channel Enhancement Mode Vertical DMOS FETs

TP2522
P-Channel Enhancement Mode
Vertical DMOS FETs
Features
► Low threshold — -2.4V max.
► High input impedance
► Low input capacitance — 125pF max.
► Fast switching speeds
► Low ON-resistance
► Free from secondary breakdown
► Low input and output leakage
► Complementary N and P-channel devices
Applications
► Logic level interfaces – ideal for TTL and CMOS
► Solid state relays
► Battery operated systems
► Photo voltaic drives
► Analog switches
► General purpose line drivers
► Telecom switches
Ordering Information
BV_DSS/BV_DGS
(V)
R_DS(ON)
max
(Ω)
-220
12
-G indicates package is RoHS compliant (‘Green’)
* MIL visual screening available.
V_GS(th)
max
(V)
-2.4
I_D(ON)
min
(A)
-0.75
General Description
This low threshold enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching
speeds are desired.
Package Options
TO-243AA (SOT-89)
Die*
TP2522N8-G
TP2522ND
Pin Configuration
DRAIN
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BV_DSS
BV_DGS
±20V
Operating and storage temperature
-55°C to +150°C
Soldering temperature*
300°C
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level
may affect device reliability. All voltages are referenced to device ground.
* Distance of 1.6 mm from case for 10 seconds.
SOURCE
DRAIN
GATE
TO-243AA (SOT-89) (N8)
Product Marking
TP5CW _{W = Code for week sealed}
TO-243AA (SOT-89) (N8)