TP2510_07 Datasheet, PDF (1/5 Pages) Supertex, Inc – Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs

TP2510
Low Threshold
P-Channel Enhancement Mode
Vertical DMOS FETs
Features
► Low threshold — -2.4V max.
► High input impedance
► Low input capacitance — 125pF max.
► Fast switching speeds
► Low on resistance
► Free from secondary breakdown
► Low input and output leakage
► Complementary N and P-channel devices
Applications
► Logic level interfaces — ideal for TTL and CMOS
► Solid state relays
► Battery operated systems
► Photo voltaic drives
► Analog switches
► General purpose line drivers
► Telecom switches
General Description
These low threshold enhancement-mode (normally-off) tran-
sistors utilize a vertical DMOS structure and Supertex’s well-
proven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
widerange of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Switching Waveforms and Test Circuit
0V
INPUT
10%
-10V
t_(ON)
90%
t_(OFF)
t_d(ON)
t_r
t_d(OFF)
t_F
0V
OUTPUT
V_DD
10%
90%
90%
10%
PULSE
GENERATOR
R_GEN
INPUT
D.U.T.
Output
R_L
V_DD
Thermal Characteristics
Package
I_D
continuous†
I_D
pulsed
Power Dissipation
@ T_A = 25^OC
θ_jc
(^OC/W)
θ_jc
(^OC/W)
I_DR†
(mA)
I_DRM
(A)
(mA)
(A)
(W)
TO-243AA
-480
-2.5
† I (continuous) is limited by max rated T .
D
j
‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm.
1.6‡
15
78‡
-480
-2.5