TP0610T-G Datasheet, PDF (1/5 Pages) Supertex, Inc – P-Channel Enhancement Mode Vertical DMOS FETs

Supertex inc.
TP0610T
P-Channel Enhancement Mode
Vertical DMOS FETs
Features
►► High input impedance and high gain
►► Low power drive requirement
►► Ease of paralleling
►► Low C_ISS and fast switching speeds
►► Excellent thermal stability
►► Integral source-drain diode
►► Free from secondary breakdown
Applications
►► Logic level interfaces - ideal for TTL and CMOS
►► Solid state relays
►► Battery operated systems
►► Photo voltaic systems
►► Analog switches
►► Power management
►► Telecom switches
General Description
This low threshold enhancement-mode (normally-off) transistor
utilizes a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces a
device with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Ordering Information
Device
Package Options
TO-236AB (SOT-23)
TP0610T
TP0610T-G
For packaged products, -G indicates package is RoHS compliant (‘Green’).
Consult factory for die / wafer form part numbers.
Refer to Die Specification VF21 for layout and dimensions.
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BV_DSS
BV_DGS
±20V
Operating and storage temperature -55^OC to +150^OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
BV_DSS/BV_DGS
(V)
-60
R_DS(ON)
(max)
(Ω)
10
I_D(ON)
(min)
(mA)
-50
Pin Configuration
DRAIN
SOURCE
GATE
TO-236AB (SOT-23) (T)
Product Marking
T50W ^{W = Code for week sealed}
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-236AB (SOT-23) (T)
Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: [phone] ● www.supertex.com