TP0606N3-G Datasheet, PDF (1/5 Pages) Supertex, Inc – P-Channel Enhancement-Mode Vertical DMOS FET

Supertex inc.
TP0606
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
►► Low threshold (-2.4V max.)
►► High input impedance
►► Low input capacitance (80pF typ.)
►► Fast switching speeds
►► Low on-resistance
►► Free from secondary breakdown
►► Low input and output leakage
Applications
►► Logic level interfaces – ideal for TTL and CMOS
►► Solid state relays
►► Battery operated systems
►► Photo voltaic drives
►► Analog switches
►► General purpose line drivers
►► Telecom switches
General Description
This low threshold, enhancement-mode (normally-off) transistor
utilizes a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination produces a
device with the power handling capabilities of bipolar transistors
and the high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Ordering Information
Device
Package
TO-92
NW
(Die in wafer form)
Wafer / Die Options
NJ
(Die on adhesive tape)
TP0606
TP0606N3-G
TP2506NW
TP2506NJ
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF25 for layout and dimensions.
ND
(Die in waffle pack)
TP2506ND
Product Summary
Pin Configuration
Device
BV_DSS/BV_DGS
(V)
R_DS(ON)
(max)
(Ω)
I_D(ON)
(min)
(A)
V_GS(th)
(max)
(V)
TP0606N3-G
-60
3.5 -1.5 -2.4
DRAIN
Absolute Maximum Ratings
SOURCE
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Value
BV_DSS
BV_DGS
±20V
GATE
TO-92 (N3)
Product Marking
Operating and storage temperature -55^OC to +150^OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
SiTP _{YY = Year Sealed}
0 6 0 6 _{WW = Week Sealed}
YYWW
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92 (N3)
Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: [phone] ● www.supertex.com