TP0604N3-G Datasheet, PDF (1/5 Pages) Supertex, Inc – P-Channel Enhancement-Mode Vertical DMOS FET

Supertex inc.
TP0604
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
►► Low threshold (-2.4V max.)
►► High input impedance
►► Low input capacitance (95pF typical)
►► Fast switching speeds
►► Low on-resistance
►► Free from secondary breakdown
►► Low input and output leakage
Applications
►► Logic level interfaces - ideal for TTL and CMOS
►► Solid state relays
►► Battery operated systems
►► Photo voltaic drives
►► Analog switches
►► General purpose line drivers
►► Telecom switches
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Ordering Information
Product Summary
Part Number
TP0604N3-G
TP0604N3-G P002
Package Option
3-Lead TO-92
Packing
1000/Bag
BV_DSS/BV_DGS
(V)
-40
R_DS(ON)
(max) (Ω)
2.0
I_D(ON)
(min) (A)
-2.0
V_GS(th)
(max) (V)
-2.4
TP0604N3-G P003
TP0604N3-G P005 3-Lead TO-92
2000/Reel Pin Configuration
TP0604N3-G P013
TP0604N3-G P014
TP2404NW
Die in wafer form
---
TP2404NJ
Die on adhesive tape ---
TP2404ND
Die in waffle pack
---
For packaged products, -G indicates package is RoHS compliant (‘Green’).
TO-92 taping specifications and winding styles per EIA-468 Standard.
Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF57 for layout and dimensions.
SOURCE
DRAIN
GATE
TO-92 (N3)
Product Marking
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Value
BV_DSS
BV_DGS
±20V
SiTP _{YY = Year Sealed}
0 6 0 4 _{WW = Week Sealed}
YYWW
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92 (N3)
Operating and storage temperature -55^OC to +150^OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Doc.# DSFP-TP0604
C082012
Supertex inc.
www.supertex.com