TN5335_13 Datasheet, PDF (1/5 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FET

Supertex inc.
TN5335
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►► Low threshold
►► High input impedance
►► Low input capacitance
►► Fast switching speeds
►► Low on-resistance
►► Free from secondary breakdown
►► Low input and output leakage
►► Complementary N- and P-channel devices
Applications
►► Logic level interfaces - ideal for TTL and CMOS
►► Solid state relays
►► Battery operated systems
►► Photo voltaic drives
►► Analog switches
►► General purpose line drivers
►► Telecom switches
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Ordering Information
Product Summary
Part Number
TN5335K1-G
TN5335N8-G
Package Option
TO-236AB (SOT-23)
TO-243AA (SOT-89)
Packing
3000/Reel
2000/Reel
BV_DSS/BV_DGS
350V
R_DS(ON)
(max)
15Ω
I_D(ON)
(min)
750mA
V_GS(th)
(max)
2.0V
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Pin Configuration
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BV_DSS
BV_DGS
±20V
Operating and storage temperature -55^OC to +150^OC
DRAIN
DRAIN
SOURCE
GATE
TO-236AB (SOT-23)
SOURCE
DRAIN
GATE
TO-243AA (SOT-89)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Product Marking
N3SW
W = Code for week sealed
= “Green” Packaging
Typical Thermal Resistance
Package
TO-236AB (SOT-23)
θ_ja
203^OC/W
TO-243AA (SOT-89)
173^OC/W
Package may or may not include the following marks: Si or
TO-236AB (SOT-23)
TN3SW ^{W = Code for week sealed}
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89)
Doc.# DSFP-TN5335
B081213
Supertex inc.
www.supertex.com