 English |
|
|
|
|
|
|
|
| TN2540_13 Datasheet, PDF (1/6 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FET | |||
| |||
|
Supertex inc.
TN2540
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
General Description
âºâº Low threshold (2.0V max.)
âºâº High input impedance
âºâº Low input capacitance (125pF max.)
âºâº Fast switching speeds
âºâº Low on-resistance
âºâº Free from secondary breakdown
âºâº Low input and output leakage
Applications
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertexâs
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
âºâº Logic level interfaces - ideal for TTL and CMOS
âºâº Solid state relays
âºâº Battery operated systems
âºâº Photo voltaic drives
âºâº Analog and Telecom switches
âºâº General purpose line drivers
Supertexâs vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Ordering Information
Part Number
Package Options Packing
TN2540N3-G
TO-92
1000/Bag
TN2540N3-G P002 TO-92
2000/Reel
TN2540N3-G P003 TO-92
2000/Reel
TN2540N3-G P005 TO-92
2000/Reel
TN2540N3-G P013 TO-92
2000/Reel
TN2540N3-G P014 TO-92
2000/Reel
TN2540N8-G
TO-243AA (SOT-89) 2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package
Refer to âP0xxâ Tape & Reel Specs for P002, P003, P005, P013, and P014 TO-92
Taping Specifications and Winding Styles
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature -55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Typical Thermal Resistance
Package
TO-92
θja
132OC/W
TO-243AA (SOT-89)
133OC/W*
* Mounted on FR5 Board, 25mm x 25mm x 1.57mm
Doc.# DSFP-TN2540
A062113
Product Summary
BVDSS/BVDGS
RDS(ON)
(max)
400V
12Ω
ID(ON)
(min)
1.0A
VGS(th)
(max)
2.0V
Pin Configuration
DRAIN
SOURCE
DRAIN
GATE
TO-92
SOURCE
DRAIN
GATE
TO-243AA (SOT-89)
Product Marking
SiTN YY = Year Sealed
2 5 4 0 WW = Week Sealed
YYWW
= âGreenâ Packaging
Package may or may not include the following marks: Si or
TO-92
TN5DW
W = Code for week sealed
= âGreenâ Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89)
Supertex inc.
www.supertex.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese