TN2124_07 Datasheet, PDF (1/5 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FET

TN2124
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
► Free from secondary breakdown
► Low power drive requirement
► Ease of paralleling
► Low C_ISS and fast switching speeds
► Excellent thermal stability
► Integral Source-Drain diode
► High input impedance and high gain
► Complementary N- and P-channel devices
Applications
► Logic level interfaces – ideal for TTL and CMOS
► Solid state relays
► Battery operated systems
► Photo voltaic drives
► Analog switches
► General purpose line drivers
► Telecom switches
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Ordering Information
BV_DSS/BV_DGS
(V)
R_DS(ON)
max
(Ω)
V_GS(th)
max
(V)
Package Option
TO-236AB (SOT-23)
240
15
2.0
TN2124K1-G
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BV_DSS
BV_DGS
±20V
Operating and storage temperature
Soldering temperature*
-55^OC to +150^OC
300^OC
GATE
TO-236AB (SOT-23) (K1)
Product Marking
N1CW W = Code for week sealed
TO-236AB (SOT-23) (K1)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.