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TN1504 Datasheet, PDF (1/2 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FETs
TN1504/TN1506/TN1510
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
► Low threshold - 2.0V max.
► High input impedance
► Low input capacitance - 50pF typical
► Fast switching speeds
► Low on resistance
► Free from secondary breakdown
► Low input and output leakage
► Complementary N- and P-channel devices
Applications
► Logic level interfaces – ideal for TTL and CMOS
► Solid state relays
► Battery operated systems
► Photo voltaic drives
► Analog switches
► General purpose line drivers
► Telecom switches
General Description
These low threshold enhancement-mode (normally-off)
transistors utilize a vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combi-
nation produces devices with the power handling capabilities
of bipolar transistors, and with the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input im-
pedance, low input capacitance, and fast switching speeds
are desired.
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-source voltage
Drain-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature
-55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the
device may occur. Functional operation under these conditions is not implied.
Continuous operation of the device at the absolute rating level may affect
device reliability. All voltages are referenced to device ground.
Ordering Information
Device
Order Number
Die*
TN1504
TN1504NW
TN1506
TN1506NW
TN1510
TN1510NW
* Die in wafer form.
BV / BV
DSS
DGS
40V
60V
100V
RDS(ON)
(max)
3.0Ω
3.0Ω
3.0Ω
VGS(th)
(max)
2.0V
2.0V
2.0V
ID(ON)
(min)
2.0A
2.0A
2.0A
1