TN0620N3-G Datasheet, PDF (1/5 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FET

TN0620
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
► Low threshold (1.6V max.)
► High input impedance
► Low input capacitance (110pF typical)
► Fast switching speeds
► Low on-resistance
► Free from secondary breakdown
► Low input and output leakage
► Complementary N- and P-channel devices
Applications
► Logic level interfaces - ideal for TTL and CMOS
► Solid state relays
► Battery operated systems
► Photo voltaic drives
► Analog switches
► General purpose line drivers
► Telecom switches
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device
Package Option
TO-92
TN0620
TN0620N3-G
-G indicates package is RoHS compliant (‘Green’)
BV_DSS/BV_DGS
(V)
200
R_DS(ON)
(max)
(Ω)
6.0
I_D(ON)
(min)
(A)
1.0
Pin Configurations
V_GS(th)
(max)
(V)
1.6
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BV_DSS
BV_DGS
±20V
Operating and storage temperature -55^OC to +150^OC
Soldering temperature*
300^OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
SOURCE
DRAIN
GATE
TO-92 (N3)
Product Marking
T N YY = Year Sealed
0 6 2 0 _{WW = Week Sealed}
YYWW
= “Green” Packaging
TO-92 (N3)
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: [phone] ● www.supertex.com