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TN0106N3-G Datasheet, PDF (1/5 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FET
Supertex inc.
TN0106
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►► Low threshold - 2.0V max.
►► High input impedance
►► Low input capacitance - 50pF typical
►► Fast switching speeds
►► Low on-resistance
►► Free from secondary breakdown
►► Low input and output leakage
Applications
►► Logic level interfaces – ideal for TTL and CMOS
►► Solid state relays
►► Battery operated systems
►► Photo voltaic drives
►► Analog switches
►► General purpose line drivers
►► Telecom switches
General Description
This low threshold, enhancement-mode (normally-off) transistor
utilizes a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination produces
a device with the power handling capabilities of bipolar transistors
and the high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low
input capacitance, and fast switching speeds are desired.
Ordering Information
Device
Package
TO-92
NW
(Die in wafer form)
Wafer / Die Options
NJ
(Die on adhesive tape)
TN0106
TN0106N3-G
TN1506NW
TN1506NJ
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF15 for layout and dimensions.
ND
(Die in waffle pack)
TN1506ND
Product Summary
Device
BVDSS/BVDGS
(V)
TN0106N3-G
60
RDS(ON)
(max)
(Ω)
3.0
ID(ON)
(min)
(A)
2.0
Absolute Maximum Ratings
VGS(th)
(max)
(V)
2.0
Pin Configurations
SOURCE
DRAIN
Parameter
Value
GATE
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature -55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
TO-92 (N3)
Product Marking
SiTN YY = Year Sealed
0 1 0 6 WW = Week Sealed
YYWW
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92 (N3)
Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com