TN0104N3-G Datasheet, PDF (1/7 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FET

Supertex inc.
TN0104
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►► Low threshold (1.6V max.)
►► High input impedance
►► Low input capacitance
►► Fast switching speeds
►► Low on-resistance
►► Free from secondary breakdown
►► Low input and output leakage
Applications
►► Logic level interfaces – ideal for TTL and CMOS
►► Solid state relays
►► Battery operated systems
►► Photo voltaic drives
►► Analog switches
►► General purpose line drivers
►► Telecom switches
General Description
This low threshold, enhancement-mode (normally-off) transistor
utilizes a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination produces
a device with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Ordering Information
Device
Package Options
TO-92
TO-243AA (SOT-89)
NW
(Die in wafer form)
Wafer / Die Options
NJ
(Die on adhesive tape)
TN0104 TN0104N3-G
TN0104N8-G
TN1504NW
TN1504NJ
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF15 for layout and dimensions.
ND
(Die in waffle pack)
TN1504ND
Product Summary
Pin Configurations
Device
BV_DSS/BV_DGS
(V)
TN0104N3-G
40
TN0104N8-G
40
R_DS(ON)
(max)
(Ω)
1.8
2.0
Absolute Maximum Ratings
Parameter
I_D(ON)
(min)
(A)
2.0
2.0
Value
SOURCE
DRAIN
GATE
TO-92 (N3)
Product Marking
DRAIN
SOURCE
DRAIN
GATE
TO-243AA (SOT-89) (N8)
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BV_DSS
BV_DGS
±20V
SiTN
0104
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Operating and storage temperature -55^OC to +150^OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Package may or may not include the following marks: Si or
TO-92 (N3)
TN1LW
W = Code for Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89) (N8)
Supertex inc.
www.supertex.com