TC6320K6-G Datasheet, PDF (1/6 Pages) Supertex, Inc – N- and P-Channel Enhancement-Mode MOSFET Pair

Supertex inc.
TC6320
N- and P-Channel
Enhancement-Mode MOSFET Pair
Features
►►Integrated GATE-to-SOURCE resistor
►►Integrated GATE-to-SOURCE Zener diode
►►Low threshold
►►Low on-resistance
►►Low input capacitance
►►Fast switching speeds
►►Free from secondary breakdown
►►Low input and output leakage
►►Independent, electrically isolated N- and
P-channels
Applications
►►High voltage pulsers
►► Amplifiers
►► Buffers
►►Piezoelectric transducer drivers
►►General purpose line drivers
►►Logic level interfaces
General Description
The Supertex TC6320 consists of high voltage, low threshold
N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN
packages. Both MOSFETs have integrated GATE-to-SOURCE
resistors and GATE-to-SOURCE Zener diode clamps which are
desired for high voltage pulser applications. It is a complimentary,
high-speed, high voltage, GATE-clamped N- and P-channel
MOSFET pair, which utilizes an advanced vertical DMOS
structure and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the power
handling capabilities of bipolar transistors and with the high
input impedance and positive temperature coefficient inherent in
MOS devices. Characteristic of all MOS structures, this device
is free from thermal runaway and thermally induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low
input capacitance, and fast switching speeds are desired.
Typical Application Circuit
VDD VH
OE
INA
10nF
INB
VSS
10nF
VL
Supertex
MD12xx, MD17xx, or MD18xx
+100V
Supertex
TC6320
-100V
Doc.# DSFP-TC6320
D012913
Supertex inc.
www.supertex.com