TC6215 Datasheet, PDF (1/5 Pages) Supertex, Inc – N- and P-Channel Enhancement-Mode Dual MOSFET

TC6215
N- and P-Channel
Enhancement-Mode Dual MOSFET
Features
► Back to back gate-source Zener diodes
► Guaranteed R_DS(ON) at 4.0V gate drive
► Low threshold
► Low on-resistance
► Independent N- and P-channels
► Electrically isolated N- and P-channels
► Low input capacitance
► Fast switching speeds
► Free from secondary breakdowns
► Low input and output leakage
Applications
► High voltage pulsers
► Amplifiers
► Buffers
► Piezoelectric transducer drivers
► General purpose line drivers
► Logic level interfaces
General Description
The Supertex TC6215 consists of high voltage, low threshold N-channel
and P-channel MOSFETs in an 8-Lead SOIC (TG) package. Both
MOSFETs have integrated back to back gate-source Zener diode clamps
and guaranteed R_DS(ON) ratings down to 4.0V gate drive allowing them to
be driven directly with standard 5.0V CMOS logic.
These low threshold enhancement-mode (normally-off) transistors utilize
an advanced vertical DMOS structure and Supertex’s well-proven silicon-
gate manufacturing process. This combination produces devices with the
power handling capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of
switching and amplifying applications where very low threshold voltage,
high breakdown voltage, high input impedance, low input capacitance,
and fast switching speeds are desired.
Ordering Information
Device
Package Option
8-Lead SOIC
4.90x3.90mm body
1.75mm height (max)
1.27mm pitch
BV_DSS/BV_DGS
N-Channel P-Channel
(V)
(V)
TC6215
TC6215TG-G
150
-150
-G indicates package is RoHS compliant (‘Green’)
R_DS(ON) (Max)
N-Channel P-Channel
(Ω)
(Ω)
4.0
7.0
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BV_DSS
BV_DGS
±20V
Operating and storage temperature -55°C to + 150°C
Soldering temperature^*
300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Pin Configuration
DP
DP
DN
DN
GP
SP
GN
SN
8-Lead SOIC (TG)
(top view)
Product Marking
YYWW
C6215
LLLL
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
Package may or may not include the following marks: Si or
8-Lead SOIC (TG)
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: [phone] ● www.supertex.com