LNE150 Datasheet, PDF (1/2 Pages) Supertex, Inc – N-Channel Enhancement-Mode DMOS FETs

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OBSOLETE
–
LNE150
N-Channel Enhancement-Mode
DMOS FETs
Preliminary
Ordering Information
BV_DSS /
BV_DGS
R_DS(ON)
(max)
I_D(ON)
(min)
Order Number / Package
TO-236AB*
Die
500V
1.0KΩ
3.0mA
LNE150K1
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
LNE150ND
Product marking for TO-236AB:
NEE❋
where ❋ = 2-week alpha date code
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Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C_ISS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Applications
Logic level interface - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drive
Analog switches
General purpose line drivers
Telecom switches
Advanced DMOS Technology
This low threshold Enhancement-mode (normally-off) transistor
utilizes an advanced DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s DMOS FETs are ideally suited to a wide range of
switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Source
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
BV_DSS
BV_DGS
-0.7V to +10V
-55°C to +150°C
300°C
Gate
Drain
TO-236AB
(SOT-23)
top view
Note: See Package Outline section for dimensions.
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