LND250_14 Datasheet, PDF (1/3 Pages) Supertex, Inc – N-Channel Depletion-Mode DMOS FET

Supertex inc.
LND250
N-Channel Depletion-Mode
DMOS FET
Features
► Free from secondary breakdown
► Low power drive requirement
► Ease of paralleling
► Excellent thermal stability
► Integral source-drain diode
► High input impedance and low C_ISS
► ESD gate protection
Applications
►► Solid state relays
►► Normally-on switches
►► Converters
►► Power supply circuits
►► Constant current sources
►► Input protection circuits
General Description
The LND250 is a high voltage N-channel depletion mode
(normally-on) transistor utilizing Supertex’s lateral DMOS
technology. The gate is ESD protected.
The LND250 is ideal for high voltage applications in the
areas of normally-on switches, precision constant current
sources, voltage ramp generation and amplification.
Ordering Information
Part Number
Package Options
Packing
LND250K1-G*
TO-236AB (SOT-23) 3000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package
* Part is not recommended for new designs. Please refer to LND150K1-G.
Absolute Maximum Ratings
Parameter
Value
Drain-to-source
Drain-to-gate
Gate-to-source
BV_DSX
BV_DGX
±20V
Operating and storage temperature
-55^OC to +150^OC
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Product Summary
BV_DSX/BV_DGX
(V)
R_DS(ON)
(max)
500
1.0kΩ
I_DSS
(min)
1.0mA
Pin Configuration
SOURCE
DRAIN
GATE
TO-236AB (SOT-23)
Product Marking
NDEW
W = Code for Week Sealed
= “Green” Packaging
TO-236AB (SOT-23)
Packages may or may not include the following marks: Si or
Doc.# DSFP-LND250
B012314
Supertex inc.
www.supertex.com