DN3765 Datasheet, PDF (1/3 Pages) Supertex, Inc – N-Channel Depletion-Mode Vertical DMOS FET

DN3765
N-Channel Depletion-Mode
Vertical DMOS FET
Features
► High input impedance
► Low input capacitance
► Fast switching speeds
► Low on-resistance
► Free from secondary breakdown
► Low input and output leakage
Applications
► Normally-on switches
► Solid state relays
► Converters
► Linear amplifiers
► Constant current sources
► Telecom
General Description
This depletion-mode (normally-on) transistor utilizes an
advanced vertical DMOS structure and Supertex’s well-
proven silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of
bipolar transistors and with the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Ordering Information
BV_DSX/
BV_DGX
(V)
R_DS(ON)
max
(Ω)
I_DSS
min
(mA)
650
8.0
200
-G indicates package is RoHS compliant (‘Green’)
Package Option
TO-252 (D-PAK)
DN3765K4-G
Pin Configuration
DRAIN
SOURCE
GATE
TO-252 (D-PAK) (K4)
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BV_DSX
BV_DGX
±20V
Operating and storage temperature -55^OC to +150^OC
Maximum junction temperature
150^OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Product Marking
YYWW
DN3765
LLLLLLL
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
TO-252 (D-PAK) (K4)