DN3545_07 Datasheet, PDF (1/6 Pages) Supertex, Inc – N-Channel Depletion-Mode Vertical DMOS FET

DN3545
N-Channel Depletion-Mode
Vertical DMOS FET
Features
► High input impedance
► Low input capacitance
► Fast switching speeds
► Low on resistance
► Free from secondary breakdown
► Low input and output leakage
Applications
► Normally-on switches
► Solid state relays
► Converters
► Linear amplifiers
► Constant current sources
► Power supply circuits
► Telecom
General Description
These depletion-mode (normally-on) transistors utilize an
advanced vertical DMOS structure and Supertex’s well-
proven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
BV_DSX
BV_DGX
±20V
-55^OC to +150^OC
300^OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
Package Options
S GD
TO-92
(front view)
D
G
D
S
TO-243AA
(top view)
Ordering Information
BV_DSX/
BV_DGX
R_DS(ON)
(max)
I_DSS
(min)
Package Options
TO-92
TO-243AA (SOT-89)
450V
DN3545N3
20Ω
200mA
DN3545N3-G
DN3545N8
DN3545N8-G
-G indicates package is RoHS compliant (‘Green’)