DN3535_07 Datasheet, PDF (1/5 Pages) Supertex, Inc – N-Channel Depletion-Mode Vertical DMOS FETs

DN3535
N-Channel Depletion-Mode Vertical DMOS FETs
Features
► High input impedance
► Low input capacitance
► Fast switching speeds
► Low on resistance
► Free from secondary breakdown
► Low input and output leakage
Applications
► Normally-on switches
► Solid state relays
► Converters
► Linear amplifiers
► Constant current sources
► Power supply circuits
► Telecom
General Description
This low threshold depletion-mode (normally-on) transistor
utilizes an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Ordering Information
BV_DSX/
BV_DGX
R_DS(ON)
(max)
I_DSS
(min)
Package Options
TO-243AA¹
350V
10Ω
200mA
DN3535N8
DN3535N8-G
-G indicates package is RoHS compliant (‘Green’)
1_{Same as SOT-89. Products shipped on 2000 piece carrier tape reels.}
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BV_DSX
BV
DGX
±20V
Operating and storage
temperature
-55^OC to +150^OC
Soldering temperature*
300^OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
Package Option
D
G
D
S
TO-243AA
(top view)