DN3525_07 Datasheet, PDF (1/5 Pages) Supertex, Inc – N-Channel Depletion-Mode Vertical DMOS FETs

DN3525
N-Channel Depletion-Mode Vertical DMOS FETs
Features
► High input impedance
► Low input capacitance
► Fast switching speeds
► Low on resistance
► Free from secondary breakdown
► Low input and output leakage
Applications
► Normally-on switches
► Solid state relays
► Converters
► Constant current sources
► Power supply circuits
► Telecom
General Description
The Supertex DN3525 is a low threshold depletion-mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Product marking for TO-243AA:
DN5C
where = 2-week alpha date code
Ordering Information
BV_DSX/
BV_DGX
250V
R
DS(ON)
(max)
6.0Ω
I
DSS
(min)
300mA
Package Options
TO-243AA¹
DN3525N8
DN3525N8-G
-G indicates package is RoHS compliant (‘Green’)
Notes: ¹Same as SOT-89.
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BV_DSX
BV_DGX
±20V
Operating and storage temperature -55^OC to +150^OC
Soldering temperature*
300^OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
Pin Configuration
D
G
D
S
TO-243AA
(top view)