DN3145_07 Datasheet, PDF (1/3 Pages) Supertex, Inc – N-Channel Depletion-Mode Vertical DMOS FETs

DN3145
N-Channel Depletion-Mode Vertical DMOS FETs
Features
► High input impedance
► Low input capacitance
► Fast switching speeds
► Low on resistance
► Free from secondary breakdown
► Low input and output leakage
Applications
► Normally-on switches
► Solid state relays
► Converters
► Constant current sources
► Power supply circuits
► Telecom
General Description
The Supertex DN3145 is a depletion-mode (normally-on)
transistor utilizing an advanced vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Ordering Information
BV_DSX/
BV_DGX
R_DS(ON)
(max)
I_DSS
(min)
Package Options
TO-243AA¹
450V
60Ω 120mA
DN3145N8
DN3145N8-G
-G indicates package is RoHS compliant (‘Green’)
Notes: ¹Same as SOT-89.
Product marking for TO-243AA:
DN1M
where = 2-week alpha date code
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BV_DSX
BV_DGX
±20V
Operating and storage
temperature
-55^OC to +150^OC
Soldering temperature*
300^OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
Pin Configuration
D
G
D
S
TO-243AA
(top view)