DN3135_07 Datasheet, PDF (1/4 Pages) Supertex, Inc – N-Channel Depletion-Mode Vertical DMOS FETs

DN3135
N-Channel Depletion-Mode Vertical DMOS FETs
Features
► High input impedance
► Low input capacitance
► Fast switching speeds
► Low on resistance
► Free from secondary breakdown
► Low input and output leakage
Applications
► Normally-on switches
► Solid state relays
► Converters
► Linear amplifiers
► Constant current sources
► Power supply circuits
► Telecom
General Description
The Supertex DN3135 is a low threshold depletion-mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Product marking for TO-236AB:
N1S
where = 2-week alpha date code
Product marking for TO-243AA:
DN1S
where = 2-week alpha date code
Ordering Information
BV_DSX/
BV_DGX
R_DS(ON)
(max)
I_DSS
(min)
350V
35Ω 180mA
-G indicates package is RoHS compliant (‘Green’)
Notes: ¹Same as SOT-23, ²Same as SOT-89.
Package Options
TO-236AB¹
TO-243AA²
DN3135K1
DN3135N8
DN3135K1-G
DN3135N8-G
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BV_DSX
BV_DGX
±20V
Operating and storage
temperature
-55^OC to +150^OC
Soldering temperature*
300^OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
Pin Configurations
D
G
S
TO-236AB
(Top View)
D
G
D
S
TO-243AA
(top view)