DN2640 Datasheet, PDF (1/2 Pages) Supertex, Inc – N-Channel Depletion-Mode Vertical DMOS FETs

– OBSOLETE – DN2640
Preliminary
N-Channel Depletion-Mode
Vertical DMOS FETs
Ordering Information
BV_DSX /
BV_DGX
400V
R_DS(ON)
(max)
6.0Ω
I_DSS
(min)
300mA
Order Number / Package
TO-92
Die
DN2640N3 DN2640ND
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
BV_DSX
BV_DGX
± 20V
Operating and Storage Temperature
-55°C to +150°C
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
300°C
Advanced DMOS Technology
8
These depletion-mode (normally-on) transistors utilize an ad-
vanced vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transis-
tors and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
SGD
TO-92
Note: See Package Outline section for dimensions.
8-13