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| DN2625 Datasheet, PDF (1/7 Pages) Supertex, Inc – N-Channel Depletion-Mode Vertical DMOS FETs | |||
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DN2625
N-Channel Depletion-Mode Vertical DMOS FETs
Features
⺠Very low gate threshold voltage
⺠Design to be source-driven
⺠Low switching losses
⺠Low effective output capacitance
⺠Design for inductive load
⺠Well matched for low second harmonic
Applications
⺠Medical ultrasound beamforming
⺠Ultrasonic array focusing transmitter
⺠Piezoelectric transducer waveform drivers
⺠High speed arbitrary waveform generator
⺠Normally-on switches
⺠Solid state relays
⺠Constant current sources
⺠Power supply circuits
General Description
The Supertex DN2625 is a low threshold depletion-mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertexâs well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefï¬cient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertexâs vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
Thermal Characteristics
Package
ID
(continuous)1
ID
(pulsed)
R2
ÎjA
RÎjC
IDR1
IDRM
(OC/W)
(OC/W)
(A)
(A)
(A)
(A)
D-PAK
50
5.5
1.1
3.3
1.1
3.3
14-Lead QFN
45
4.0
Notes:
1. ID (Continuous) is limited by Max. TJ
2. 4-layer, 1oz, 3x4inch PCB, with 20-via for drain pad.
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