DN2624 Datasheet, PDF (1/4 Pages) Supertex, Inc – N-Channel Depletion-Mode Vertical DMOS FETs

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N-Channel Depletion-Mode
Vertical DMOS FETs
Ordering Information
BV_DSX /
BV_DGX
240V
R_DS(ON)
(max)
4.0Ω
I_DSS
(min)
600mA
Order Number / Package
TO-92
DN2624N3
Die
DN2624ND
DN2624
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Advanced DMOS Technology
8
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combina-
tion produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and posi-
tive temperature coefficient inherent in MOS devices. Character-
istic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
BV_DSX
BV_DGX
± 20V
Operating and Storage Temperature
-55°C to +150°C
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
300°C
SGD
TO-92
Note: See Package Outline section for dimensions.
8-9